| PART |
Description |
Maker |
| MGB15N40CL MGP15N40CL MGB15N40CLT4 MGP15N40CL-D |
Ignition IGBT 15 Amps, 410 Volts N-Channel TO-220 and D2PAK
|
ONSEMI[ON Semiconductor]
|
| NGD15N41CL-D |
Ignition IGBT 15 Amps, 410 Volts N-Channel DPAK, D2PAK and TO-220
|
ON Semiconductor
|
| 041063050001WG 041063050002WG 4106309 041063050006 |
Power Relay 410 63 125隆?C
Power Relay 410 63 125°C
|
Tyco Electronics
|
| BZX84C3 BZX84C36 BZX84C39 |
Silicon 410 mWatt Zener Diodes
|
Micro Commercial Components Corp.
|
| HPQ-05 |
410 MHz - 455 MHz RF/MICROWAVE COMBINER, 0.35 dB INSERTION LOSS ROHS COMPLIANT, CASE AT577, 6 PIN
|
Mini-Circuits
|
| NGB15N41CLT4G NGP15N41CLG NGB15N41CLT4 NGD15N41CL |
Ignition IGBT 15 Amps, 410 Volts
|
ONSEMI[ON Semiconductor]
|
| TT430N DT95N TD251N |
800 A, 1800 V, SCR
150 A, 600 V, SCR
410 A, 600 V, SCR
|
Infineon Technologies AG
|
| BZT52B10S BZT52B11S BZT52B12S BZT52B13S BZT52B14S |
20 V, 0.41 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
SURFACE MOUNT ZENER DIODE VOLTAGE RANGE 3 to 39 Volts POWER RATING 410 mWatts
6.2 V, 0.41 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
|
RECTRON LTD
Rectron Semiconductor
|
| M64080GP |
410 MHz 2System 1Chip PLL Frequency Synthesizer
410MHz 2SYSTEM 1CHIP PLL FREQUENCY SYNTHESIZER
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
|
| UPA675T UPA675T-T1 UPA675T-T2 UPA675T-A |
100 mA, 16 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
N-channel enhancement type MOS FET
|
NEC
|
